2sa2039 / 2sC5706 no.6912-1/5 features ? dc-dc converter, relay drivers, lamp drivers, motor drivers, strobes. features ? adoption of fbet, mbit process. ? large current capacitance. ? low collector-to-emitter saturation voltage. ? high-speed switching. ? high allowable power dissipation. sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn6912 2sa2039 / 2sC5706 high current switching applications package dimensions unit : mm 2045b 30101 ts im ta-3232 any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. pnp / npn epitaxial planar silicon transistors 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp 5.0 6.5 0.85 0.7 0.6 1.5 5.5 7.0 0.8 1.6 7.5 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 [2sa2039 / 2sC5706] [2sa2039 / 2sC5706] package dimensions unit : mm 2044b 1 : base 2 : collector 3 : emitter 4 : collector sanyo : tp-fa 6.5 2.3 0.5 1.5 5.5 0.8 7.0 1.2 2.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3
2sa2039 / 2sC5706 no.6912-2/5 specifications note*( ) : 2sa2039 absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo (--50)80 v collector-to-emitter voltage v ces (--50)80 v collector-to-emitter voltage v ceo (--)50 v emitter-to-base voltage v ebo (--)6 v collector current i c (--)5 a collector current (pulse) i cp (--)7.5 a base current i b (--)1.2 a collector dissipation p c 0.8 w tc=25 c15w junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =(--)40v, i e =0 (--)1 m a emitter cutoff current i ebo v eb =(--)4v, i c =0 (--)1 m a dc current gain h fe v ce =(--)2v, i c =(--)500ma 200 560 gain-bandwidth product f t v ce =(--)10v, i c =(--)500ma (360)400 mhz output capacitance cob v cb =(--)10v, f=1mhz (24)15 pf collector-to-emitter saturation voltage v ce (sat) i c =(--)1a, i b =(--)50ma ( -- 115)90 ( -- 195)135 mv i c =(--)2a, i b =(--)100ma ( -- 255)160 ( -- 430)240 mv base-to-emitter saturation voltage v be (sat) i c =(--)2a, i b =(--)100ma (--)0.89 (--)1.2 v collector-to-base breakdown voltage v (br)cbo i c =(--)10 m a, i e =0 (--50)80 v collector-to-emitter breakdown voltage v (br)ces i c =(--)100 m a, r be =0 (--50)80 v collector-to-emitter breakdown voltage v (br)ceo i c =(--)1ma, r be = (--)50 v emitter-to-base breakdown voltage v (br)ebo i e =(--)10 m a, i c =0 (--)6 v turn-on time t on see specified test circuit. (30)35 ns storage time t stg see specified test circuit. (230)300 ns fall time t f see specified test circuit. (15)20 ns swicthing time test circuit v r 10 25 v cc =25v v be = --5v 10i b1 = --10i b2 = i c =1a + + 50 input output r b 100 f 470 f pw=20 s i b1 i b2 d.c. 1% for pnp, the polarity is reversed.
2sa2039 / 2sC5706 no.6912-3/5 --10000 --1000 2 3 5 7 2 3 5 7 --100 2 3 5 7 --10 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c collector current, i c -- a ta=75 c -- 25 c it02976 2sa2039 i c / i b =20 0.01 23 57 0.1 23 57 1.0 23 57 10 10 7 5 3 2 100 7 5 3 2 1000 v ce (sat) -- i c collector current, i c -- a it02978 ta=75 c 25 c --25 c 2sC5706 i c / i b =20 ta=75 c 25 c --25 c 1000 100 7 5 3 2 7 5 3 2 10 --0.01 3 25 --10 --0.1 73 257 3 257 --1.0 h fe -- i c collector current, i c -- a dc current gain, h fe 2sa2039 v ce = --2v it00156 1000 100 7 5 3 2 7 5 3 2 10 0.01 3 25 10 0.1 73 257 3 257 1.0 h fe -- i c collector current, i c -- a dc current gain, h fe ta=75 c --25 c 25 c 2sC5706 v ce =2v it00157 25 c collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a it02975 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a 2sC5706 v ce =2v 25 c --25 c it00155 ta=75 c 25 c --25 c 2sa2039 v ce = --2v --4.0 --3.5 --3.0 --2.5 --2.0 --1.0 --0.5 --1.5 0 0 --0.2 --0.4 --0.6 --0.8 --1.4 --1.0 --1.2 i c -- v be base-to-emitter voltage, v be -- v collector current, i c -- a it00154 0 -- 1 -- 2 -- 3 -- 4 -- 5 0 --0.4 --0.8 --1.0 --1.2 --1.4 i c -- v ce collector-to-emitter voltage, v ce -- v collector current, i c -- a --10ma --5ma --20ma --30ma --60ma --80ma --100ma i b =0 it02974 --40ma --50ma --70ma 0 1 2 3 4 5 0 0.4 0.8 1.0 1.2 1.4 5ma 20ma 10ma i b =0 30ma 40ma 50ma 60ma 70ma 80ma 90ma 100ma 2sa2039 2sC5706 --90ma ta=75 c
2sa2039 / 2sC5706 no.6912-4/5 f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 7 3 100 10 2 5 1000 7 5 3 2 --0.01 257 7 7 3 --0.1 25 325 3 --1.0 --10 57 it00166 2sa2039 v ce = --10v f t -- i c gain-bandwidth product, f t -- mhz collector current, i c -- a 7 3 100 10 2 5 1000 7 5 3 2 0.01 257 7 7 3 0.1 25 325 3 1.0 10 5 it00167 2sC5706 v ce =10v cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 5 3 2 7 5 3 2 7 5 3 2 100 10 0.1 23 3 7737 75 5 1.0 2 10 2 5 100 5 it00165 2sC5706 f=1mhz cob -- v cb output capacitance, cob -- pf collector-to-base voltage, v cb -- v 5 3 2 7 5 3 2 2 7 5 3 100 10 --0.1 23 7 5 7 5237 5237 5 --1.0 --10 --100 it00164 2sa2039 f=1mhz 0.01 0.1 23 57 23 57 23 57 1.0 10 10000 1000 7 5 3 2 7 5 3 2 7 5 3 2 100 10 v ce (sat) -- i c collector current, i c -- a it02979 ta=75 c --25 c 2sC5706 i c / i b =50 10 1.0 0.1 0.01 0.1 1.0 10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sC5706 i c / i b =50 v be (sat) -- i c collector current, i c -- a base-to-emitter saturation voltage, v be (sat) -- v it00163 v be (sat) -- i c base-to-emitter saturation voltage, v be (sat) -- v collector current, i c -- a --10 --1.0 --0.1 --0.01 --0.1 --1.0 --10 ta= --25 c 25 c 75 c 7 5 3 2 7 5 3 2 23 57 23 57 23 57 2sa2039 i c / i b =50 it00162 --10000 --1000 2 3 5 7 2 3 5 7 --100 2 3 5 7 --10 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c collector current, i c -- a ta=75 c 25 c --25 c it02977 2sa2039 i c / i b =50 25 c collector-to-emitter saturation voltage, v ce (sat) -- mv collector-to-emitter saturation voltage, v ce (sat) -- mv
2sa2039 / 2sC5706 no.6912-5/5 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of march, 2001. specifications and information herein are subject to change without notice. ps 20 060 40 80 100 140 120 160 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 a s o collector current, i c -- a collector-to-emitter voltage, v ce -- v 0.01 0.1 1.0 7 5 3 2 7 5 3 2 10 7 5 3 2 2 1.0 0.1 10 100 25 37 25 37 25 37 i cp =7.5a 100ms 10ms 1ms i c =5a it02980 2sa2039 / 2sC5706 tc=25 c single puls for pnp, the minus sign(--)is omitted collector dissipation, p c -- w ambient temperature, ta -- c 0 2 4 6 8 10 12 14 15 16 18 20 060 40 80 100 140 120 160 p c -- ta it02981 2sa2039 / 2sC5706 collector dissipation, p c -- w case temperature, tc -- c p c -- tc it02982 dc operation( tc=25 c ) dc operation( ta=25 c ) 500 s 100 s no heat sink 2sa2039 / 2sC5706
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